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Advance Product Information
Feb 4, 2000
33-36 GHz 2W Power Amplifier
TGA1141
Key Features * 0.25 um pHEMT Technology * 17 dB Nominal Gain * 31 dBm Pout @ P1dB, * Psat 33dBm @ 6V , 34dBm @7V * Bias 6 - 7V @ 1.5A Primary Applications * Military Radar Systems * Ka Band Sat-Com * Point-to-Point Radio
Chip Dimensions 4.13 mm x 3.3 mm
( ) Wafer Lot 9918802-1, -2, -3, +6V, ~ 880mA
22
20 Small-signal Gain (dB)
18
Performance Summary Table
Description Performance Evaluation Fixtured with Flare TFNs 33 to 36 GHz > 17 dB nom, 34 - 35.2 GHz > 17 dB nom, 33 - 36 GHz ~ 5 dB nom, 34 - 35.2 GHz ~ 5 dB nom. 33 - 36 GHz > 8 dB nom, 34 - 35.2 GHz > 7 dB nom, 33 - 36 GHz 32.3dBm min. 34 -35.2 GHz 31.5dBm min, 34 - 35.2 GHz over temp. > 20% +25C Tested under -26, +25, & +100C Predict: -43C < 1.5 A max over operating frequency and Temp. range +6V 4.134 mm x 3.300 mm 2 13.6mm
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14
Frequency range Small signal gain Input return loss
30 32 34 36 38 40
12
10 Frequency (GHz)
Output return loss Output power
35 34 33 32 Pout (dBm) 31 30 29 28 27 26 25 32 33 34 35 Frequency (GHz) 36 37
P1dB_ave Psat_ave
PAE Operating temperature range Ids Vds Die size
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
1
Advance Product Information
Feb 4, 2000
TGA1141 Measured Average Small Signal Data
( ) Wafer Lot 9918802-1, -2, -3, +6V, ~ 880mA
22
20 Small-signal Gain (dB)
18
S21
16
14
12
10 30 32 34 36 38 40 Frequency (GHz)
( ) Wafer Lot 9918802-1, -2, -3, +6V, ~ 880mA
0 -2 Input & Output Return Loss (dB) -4 -6 S11 -8 -10 -12 -14 30 32 34 36 38 40 Frequency (GHz) S22
S11,S22
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 2
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
Feb 4, 2000
Measured Power Data
35 34
TGA1141
Pout
Pout (dBm)
33 32 31 30 29 28 27 26 25 32 33 34 35 Frequency (GHz) ) 36 37
P1dB_ave Psat_ave
(
30 28
PAE
PAE (%)
26 24 22 20 18 16 14 12 10 32 33 34 35 36 37 Frequency (GHz)
35 34.5
PAE@P1dB PAE@Psat
Psat vs Vd
Pout (dBm)
34 33.5 33 32.5 32 31.5 31 30.5 30 32 33 34 35 36 37 Frequency (GHz) +6V +7V
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
3
Advance Product Information
Feb 4, 2000
TGA1141
( ) Pout, Gain vs. Pin at -26C, +25C and +100C w9918802-1 Dev 2505: 34.0GHz +6V
35 33 31 29 Pout (dBm) 27 25 23 21 19 17 15 0 5 10 m) Pin (dB 15 20 25 20 19 18 17 Gain (dB) 16 15 14 13 12 11 10 P +25C out P +100C out P -26C out G +25C ain G +100C ain G -26C ain
Pout vs. Temperature Data Summary Matrix:
T= -26C T= +25C T= +100C Freq (GHz) min Pout mean Pout min Pout mean Pout min Pout mean Pout 34 33 33 32.7 32.8 31.9 32 34.6 32.8 32.9 32.5 32.6 31.7 31.8 35.2 32.5 32.7 32.3 32.4 31.5 31.6 Ave. Pout (dBm) 32.8 32.9 32.5 32.6 31.7 31.8
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
4
Advance Product Information
Feb 4, 2000
TGA1141
Chip Assembly and Bonding Diagram
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
5
Advance Product Information
Feb 4, 2000
Assembly Process Notes
Reflow process assembly notes: *= *= *= *= *= AuSn (80/20) solder with limited exposure to temperatures at or above 300C alloy station or conveyor furnace with reducing atmosphere no fluxes should be utilized coefficient of thermal expansion matching is critical for long-term reliability storage in dry nitrogen atmosphere
Component placement and adhesive attachment assembly notes: *= *= *= *= *= *= *= vacuum pencils and/or vacuum collets preferred method of pick up avoidance of air bridges during placement force impact critical during auto placement organic attachment can be used in low-power applications curing should be done in a convection oven; proper exhaust is a safety concern microwave or radiant curing should not be used because of differential heating coefficient of thermal expansion matching is critical
Interconnect process assembly notes: *= *= *= *= *= thermosonic ball bonding is the preferred interconnect technique force, time, and ultrasonics are critical parameters aluminum wire should not be used discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire maximum stage temperature: 200C
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
6

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